{"id":140344,"date":"2023-06-22T17:12:15","date_gmt":"2023-06-22T08:12:15","guid":{"rendered":"http:\/\/ee.presscat.kr\/?post_type=research-achieve&p=140344"},"modified":"2026-04-13T15:47:55","modified_gmt":"2026-04-13T06:47:55","slug":"ph-d-candidate-songhyeon-kukadvisor-sanghyeon-kim-won-best-student-paper-award-at-2023-imw","status":"publish","type":"research-achieve","link":"http:\/\/ee.presscat.kr\/en\/research-achieve\/ph-d-candidate-songhyeon-kukadvisor-sanghyeon-kim-won-best-student-paper-award-at-2023-imw\/","title":{"rendered":"Ph.D. Candidate Songhyeon Kuk(advisor Sanghyeon Kim) won Best Student Paper Award at 2023 IMW"},"content":{"rendered":"
Ph.D. Candidate Songhyeon Kuk won Best Student Paper Award at 2023 IMW.<\/span><\/strong><\/span><\/div>\n
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Songhyeon Kuk, Ph.D student from professor Sanghyeon Kim’s lab, won the Best Student Paper at the 2023 International Memory Workshop (IMW).\u00a0<\/span><\/p>\n

IMW is an international conference dealing with technology development for memory technology. <\/span><\/p>\n

It is a competitive conference with an acceptance rate of around 30% (29% this year) and was held in Monterey, USA this year. <\/span><\/p>\n

PhD Candidate\u00a0Songhyeon Kuk’s paper proposed the idea of using P-channel to reduce the performance degradation of the conventional ferroelectric field effect transistors (FET). <\/span><\/p>\n

It was suggested that the P-Channel ferroelectric FET could be a candidate for next-generation NAND flash memory with excellent performance, and in recognition of this value, Songhyeon Kuk won the Best student paper award. <\/span><\/p>\n

In addition, Songhyun Kuk presented a paper on the method of designing ferroelectric FET using next-generation semiconductor processes at the VLSI symposium on Technology and Circuits held last week.<\/span><\/p>\n

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– Conference : 2023 International Memory Workshop (IMW)<\/span><\/div>\n
– Date : May 21-24. 2023 (Monterey, CA, US)<\/span><\/div>\n
– Award : Best student paper award<\/span><\/div>\n
– Authors : Songhyeon Kuk, Jaehoon Han, Bongho Kim, Junpyo Kim, Sanghyeon Kim (Advisor)<\/span><\/div>\n
– Paper Title :\u00a0Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND\u00a0<\/span><\/div>\n<\/div>\n<\/div>\n
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