Our departments professor Sung-Yool Choi team\u2019s research has been selected as the front cover of the July 13th\u2019s version of \u2018Advanced Electronic Materials\u2019. The article is titled “Vertical\u2010Tunneling Field\u2010Effect Transistor Based on WSe2\u2010MoS2 Heterostructure with Ion Gel Dielectric”.
\nThe team used a heterostructure of MoS2-WSe2, well known 2D materials, and an ion-gel gate to fabricate a p-type vertical tunneling transistor with an SS-value of 36mW\/dec. The developed p-type transistor can be integrated with other n-type transistors and can hopefully lower the computing power for future smart sensor networks, autonomous vehicles and high-speed mobile computing systems.
\nThe article can be seen in the following link.<\/p>\n