{"id":116932,"date":"2019-05-31T00:00:00","date_gmt":"2019-05-30T15:00:00","guid":{"rendered":"http:\/\/175.125.95.178\/ai-in-device\/16932\/"},"modified":"2026-05-03T04:59:10","modified_gmt":"2026-05-02T19:59:10","slug":"16932","status":"publish","type":"ai-in-device","link":"http:\/\/ee.presscat.kr\/en\/ai-in-device\/16932\/","title":{"rendered":"Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics"},"content":{"rendered":"<p>A research article authored by Sang Cheol Yang (KAIST EE), Junhwan Choi (KAIST CBE), Byung Chul Jang (KAIST EE), Woonggi Hong (KAIST EE), Gi Woong Shim (KAIST EE), Sang Yoon Yang (KAIST EE), Sung Gap Im (KAIST CBE), and Sung\u2010Yool Choi (KAIST EE; Corresponding author) was published in <em>Advanced Electronic Materials<\/em> (2019.05)<\/p>\n<p><strong>Article title: Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS<sub>2<\/sub> and Ultrathin Polymer Dielectrics<\/strong><\/p>\n<p>With the advent of arti\ufb01cial intelligence and the Internet of Things, demand has grown for \ufb02exible, low-power, high-density nonvolatile memory capable of handling vast amounts of information. Ultrathin-layered 2D semiconductor materials such as molybdenum disul\ufb01de (MoS<sub>2<\/sub>) have considerable potential for \ufb02exible electronic device applications because of their unique physical properties. However, development of \ufb02exible MoS<sub>2<\/sub>-based \ufb02ash memory is challenging, as there is a lack of \ufb02exible dielectric materials with suf\ufb01cient insulating properties for use in \ufb02ash memory devices with dielectric bilayers. Here, large-scale, low-power nonvolatile memory is realized based on a chemical vapor deposition (CVD)-grown millimeter-scale few-layer MoS<sub>2<\/sub> semiconductor channel and polymer dielectrics prepared via an initiated CVD (iCVD) process. Using the outstanding insulating properties and solvent-free nature of iCVD, fabricated memory devices with a tunable memory window, a high on\/off ratio (\u224810<sup>6<\/sup>), low operating voltages (\u224813 V), stable retention times exceeding 10<sup>5<\/sup> s with a possible extrapolated duration of years, and cycling endurance exceeding 1500 cycles are demonstrated. Owing to these characteristics, these devices distinctly outperform previously reported MoS<sub>2<\/sub>-based memory devices. Leveraging the inherent mechanical \ufb02exibility of both ultrathin polymer dielectrics and MoS<sub>2<\/sub>, this work is a step toward realization of large-scale, low-power, \ufb02exible MoS<sub>2<\/sub>-based \ufb02ash memory.<\/p>\n<p><img decoding=\"async\" alt=\"\" class=\"media-element file-default\" data-delta=\"1\" data-fid=\"6879\" data-media-element=\"1\" src=\"http:\/\/ee.presscat.kr\/sites\/default\/files\/%ED%8F%B4%EB%A6%AC%EB%A8%B8.png\" title=\"\"><\/p>\n<p><strong>Figure 1.<\/strong> <strong>A<\/strong> Schematic illustration of fabricated MoS<sub>2<\/sub>-based memory device composed of pV3D3 tunneling dielectric, Au nanoparticle (NP) FG, and pC1D1 blocking dielectric layer. <strong>B<\/strong> Cross-sectional HRTEM image of memory device. <strong>C<\/strong> Optical microscopy image of fabricated 5 \u00d7 6 memory device array. <strong>D<\/strong> Transfer curves as functions of pulse width during erasing operation.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>894<\/p>\n","protected":false},"featured_media":126819,"template":"","class_list":["post-116932","ai-in-device","type-ai-in-device","status-publish","has-post-thumbnail","hentry"],"acf":[],"_links":{"self":[{"href":"http:\/\/ee.presscat.kr\/en\/wp-json\/wp\/v2\/ai-in-device\/116932","targetHints":{"allow":["GET"]}}],"collection":[{"href":"http:\/\/ee.presscat.kr\/en\/wp-json\/wp\/v2\/ai-in-device"}],"about":[{"href":"http:\/\/ee.presscat.kr\/en\/wp-json\/wp\/v2\/types\/ai-in-device"}],"wp:featuredmedia":[{"embeddable":true,"href":"http:\/\/ee.presscat.kr\/en\/wp-json\/wp\/v2\/media\/126819"}],"wp:attachment":[{"href":"http:\/\/ee.presscat.kr\/en\/wp-json\/wp\/v2\/media?parent=116932"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}