Songhyeon Kuk, Ph.D student from professor Sanghyeon Kim’s lab, won the Best Student Paper at the 2023 International Memory Workshop (IMW).
IMW is an international conference dealing with technology development for memory technology.
It is a competitive conference with an acceptance rate of around 30% (29% this year) and was held in Monterey, USA this year.
PhD Candidate Songhyeon Kuk’s paper proposed the idea of using P-channel to reduce the performance degradation of the conventional ferroelectric field effect transistors (FET).
It was suggested that the P-Channel ferroelectric FET could be a candidate for next-generation NAND flash memory with excellent performance, and in recognition of this value, Songhyeon Kuk won the Best student paper award.
In addition, Songhyun Kuk presented a paper on the method of designing ferroelectric FET using next-generation semiconductor processes at the VLSI symposium on Technology and Circuits held last week.
